University of California, Riverside

Bourns College of Engineering

Alexander Balandin

Faculty Profile

Faculty Profile

Alexander A. Balandin

Distinguished Professor of Electrical and Computer Engineering
Founding Chair, Materials Science and Engineering
Alexander Balandin

Ph.D. Electrical Engineering
University of Notre Dame, 1997

M.S. Applied Physics
Moscow Institute of Physics and Technology, 1991

Department of Electrical and Computer Engineering                                                            435 Winston Chung Hall
University of California, Riverside
Riverside, CA 92521

Telephone: 951-827-2351
Facsimile: 951-827-2425
Personal Webpage

Former Institution: Electrical Engineering Department, University of California, Los Angeles


Alexander A. Balandin received his BS (1989) and MS (1991) degrees Summa Cum Laude in Applied Physics and Mathematics from the Moscow Institute of Physics & Technology (MIPT), Russia. He received his second MS (1995) and PhD (1996) degrees in Electrical Engineering from the University of Notre Dame, USA. From 1997 to 1999, he worked as Research Engineer at the University of California – Los Angeles (UCLA). In 1999 he joined the Department of Electrical Engineering, University of California – Riverside (UCR), where he is presently a Professor of Electrical Engineering and Founding Chair of Materials Science and Engineering (MS&E). He is Director of the Nano-Device Laboratory (NDL), which he organized in 2000 entirely with external funding. In 2005, he was a Visiting Professor at the University of Cambridge, U.K.

Prof. Balandin is a recipient of IEEE Pioneer of Nanotechnology Award for 2011. His research was recognized by election to the Fellow grade of many professional societies. Prof. Balandin is a Fellow of The American Physical Society (APS), a Fellow of The Institute of Electrical and Electronic Engineering (IEEE), a Fellow of The Optical Society of America (OSA), a Fellow of The International Society for Optical Engineering (SPIE), a Fellow of The Institute of Physics (IOP), a Fellow of the Institute of Materials, Minerals and Mining (IOM3), and a Fellow of The American Association for Advancement of Science (AAAS). He is also a recipient of the US Office of Naval Research (ONR) Young Investigator Award, National Science Foundation (NSF) CAREER Award, University of California Regents Award, and Merrill Lynch Innovation Award.

He authored ~ 185 technical journal papers, 15 invited review chapters, edited/coauthored 7 books and the five-volume Handbook of Semiconductor Nanostructures and Nanodevices. He has given more than 80 plenary, keynote and invited talks at international conferences, universities and government organizations. Prof. Balandin’s papers have been cited ~10,000 times. His h-index is 50 (in the end of 2012).

Prof. Balandin serves as Editor of IEEE Transactions on Nanotechnology (TNANO), and as an Editor-in-Chief of the Journal of Nanoelectronics and Optoelectronics. His research has been supported though grants and contracts from NSF, ONR, AFOSR, ARO, NASA, DOE, SRC, DARPA, CRDF, UC MICRO, IBM, TRW and Raytheon at the level of ~$1M per year for the last 10 years. More information about his research can be found at


  • M.S. Applied Physics 1991 Moscow Institute of Physics & Technology (Summa Cum Laude)
  • M.S. Electrical Engineering 1995 University of Notre Dame
  • Ph.D. Electrical Engineering 1997 University of Notre Dame


  • Fellow, The Institute of Electrical and Electronics Engineering (IEEE), 2012
  • Fellow, The American Physics Society (APS), 2012
  • Fellow, The Institute of Materials, Minerals and Mining (IOM3), U.K., 2012
  • IEEE Pioneer Award in Nanotechnology, 2011
  • Fellow, The Institute of Physics (IOP),U.K., 2011
  • Fellow, The Institute of Physics, U.K. (IOP), 2011
  • Fellow, The Optical Society (OSA), 2010
  • Fellow, The International Society for Optical Engineering (SPIE), 2010
  • Fellow, American Association for Advancement of Science (AAAS), 2007
  • Associate Fellow, Pembroke College, University of Cambridge, 2005
  • US Office of Naval Research (ONR) Young Investigator Award, 2002
  • National Science Foundation (NSF) CAREER Award, 2001
  • UC Regents Faculty Award, 2000
  • Merrill Lynch Innovation Award, New York, 1998
  • US Civil Research and Development Foundation (CRDF) Young Investigator Award, 1997
  • Eta Kappa Nu Engineering Honor Society, 1994

Research Areas

Prof. Balandin’s research interests are in the area of advanced materials, nanostructures and nanodevices for electronics, optoelectronics and renewable energy conversion. He conducts both experimental and theoretical research. He is recognized as the pioneer of the graphene thermal field who discovered unique heat conduction properties of graphene, explained them theoretically and proposed graphene’s applications in thermal management, thermally-aware electronics and renewable energy. Prof. Balandin made major contributions to development of the phonon engineering concept and its thermoelectric energy and electronic applications; investigation of thermal transport in nanostructures; excitonic and phonon confinement effects in nanostructures; 1/f noise in electronic devices; and device applications of quantum dots and graphene. Balandin group demonstrated of the first low-noise top-gate graphene transistor, graphene triple-mode amplifier, graphene phase-detector for RF communications, selective gas sensing with graphene devices and carried out the first exfoliation of the atomically-thin films of the topological insulators. Balandin group’s achievements were highlighted in Nature, Nature Nanotechnology, IEEE Spectrum, MIT Technology Review, Materials Today, Physics World, nationally syndicated radio programs and other media worldwide.

Selected Publications

Professor Balandin authored ~ 185 technical papers, 15 invited review chapters, edited and coauthored 7 books and the five-volume Handbook of Semiconductor Nanostructures and Nanodevices.His h-index is 50 (end of 2012). Below are highlights of his technical journal publications.

  • Z. Yan, G. Liu, J.M. Khan and A.A. Balandin "Graphene quilts for thermal management of high-power GaN transistors," Nature Communications 3, 827 (2012).
  • S. Chen, Q. Wu, C. Mishra, J. Kang, H. Zhang, K. Cho, W. Cai, A.A. Balandin and R.S. Ruoff, Thermal conductivity of isotopically modified graphene, Nature Materials 11, 203 (2012
  • A.A. Balandin, Thermal properties of graphene and nanostructured carbon materials, Nature Materials, 10, 569 (2011) – invited review
  • X. Yang, G. Liu, M. Rostami, A.A. Balandin and K. Mohanram, Graphene ambipolar multiplier phase detector, IEEE Electron Device Letters, 32, 1328 (2011)
  • S. Ghosh, W. Bao, D.L. Nika, S. Subrina, E.P. Pokatilov, C.N. Lau and A.A. Balandin, Dimensional crossover of thermal transport in few-layer graphene, Nature Materials, 9, 555 (2010)
  • D. Teweldebrhan, V. Goyal, M. Rahman and A.A. Balandin, Atomically-thin crystalline films and ribbons of bismuth telluride, Applied Physics Letters, 96, 053107 (2010) - Issue's Cover
  • D. Teweldebrhan, V. Goyal and A.A. Balandin, Exfoliation and characterization of bismuth telluride atomic quintuples and quasi-two-dimensional crystals, Nano Letters, 10, 1209 (2010)
  • D.L. Nika, E.P. Pokatilov, A.S. Askerov and A.A. Balandin, Phonon thermal conduction in graphene: Role of Umklapp and edge roughness scattering, Physical Review B, 79, 155413 (2009) - Editors' Selection
  • A.A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao and C.N. Lau, Superior thermal conductivity of single-layer graphene, Nano Letters, 8, 902 (2008) - cited more than 1,500 times in three years
  • A. Balandin and K.L. Wang, Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well, Physical Review B, 58, 1544 (1998) – introduction of the “phonon engineering” term

More Information 

General Campus Information

University of California, Riverside
900 University Ave.
Riverside, CA 92521
Tel: (951) 827-1012

College Information

Bourns College of Engineering
446 Winston Chung Hall

Tel: (951) 827-5190
Fax: (951) 827-3188