439 Engineering II
Riverside, Ca 92521
Phone: 951-827-7131
Fax: 951-827-2425

Jianlin Liu
Assistant Professor
Electrical Engineering

Degrees

Ph.D. Electrical Engineering 2003

University of California at Los Angeles

Ph.D. Physics 1997

Nanjing University, China

B.S. Physics 1993

Nanjing University, China

Awards

• Ph.D dissertation of Physics is among “100 national excellent doctoral dissertations of China in all disciplines" 2001
 

Research Area

1) Silicon-based and zinc oxide based thin films, quantum wires and quantum dots; 2) Nanoelectronic devices including nonvolatile memories and nanoscale field effect transistors; 3) Silicon photonics and zinc oxide photonics including lasers, light emitting diodes and photodetectors; 4) Diluted magnetic semiconductors and spintronic devices.

Publications

SELECTED PUBLICATIONS

J. L. Liu, W. G. Wu, A. Balandin, G. L. Jin, and K. L. Wang, "Intersubband Absorption in Boron-doped Multiple Ge Quantum Dots", Appl.Phys.Lett. 74(2), 185, 1999.

J. L. Liu, G. Jin, Y. S. Tang, Y. H. Luo, K. L. Wang, and D. P. Yu, "Optical and Acoustic Phonon Modes in Self-organized Ge Quantum Dot Superlattices", Appl.Phys.Lett. 76(5), 586, 2000.

J. L. Liu, S. Tong, Y. H. Luo, J. Wan, and K. L. Wang, "High-quality Ge Films on Si Substrates using Sb-surfactant-mediated graded SiGe buffers", Appl. Phys. Lett. 79, 3431, 2001.

S. Tong, J. L. Liu, Jun Wan, and Kang L. Wang, "Normal-incidence Ge Quantum-dot Photodetectors at 1.5 Micron Based on Si Substrate", Appl. Phys. Lett. 80, 1189, 2002.

J. L. Liu, A. Khitun, K. L. Wang, W. L. Liu, G. Chen, Q. H. Xie, and S. G. Thomas, "Cross-plane thermal conductivity of self-assembled Ge quantum dot superlattices", Phys. Rev. B, 67, 165333, 2003.

S. Tong, F. Liu, A. Khitun, K. L. Wang, and J. L. Liu, “Tunable normal incident Ge quantum dot midinfrared photodetectors”, J. Appl. Phys. 96, 773, 2004.

F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu, and W. P. Beyermann, “High-mobility Sb-doped P-type ZnO by Molecular Beam Epitaxy”, Appl. Phys. Lett. 87, 152101, 2005.

Yan Zhu, Bei Li, Jianlin Liu, G. F. Liu and J. A. Yarmoff, “TiSi2/Si heteronanocrystal metal-oxide-semiconductor-field-effect-transistor memory”, Appl. Phys. Lett. 89, 233113, 2006.

Bei Li, Jianlin Liu, G. F. Liu, and J. A. Yormoff , “Ge/Si heteronanocrystal floating gate memory”, Appl. Phys. Lett. 91, 132107(2007)

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes” , Appl. Phys. Lett. 92, 152103(2008)

For additional information, please see Professor Liu's faculty webpage.

http://www.ee.ucr.edu/~jianlin

Former Institution

University of California, Los Angeles

Biography

Jianlin Liu received B.S. and Ph.D. degrees in Physics from Nanjing University, China in 1993 and 1997, respectively, and a Ph.D. in Electrical Engineering from UCLA in 2003. Dr. Liu was a Staff Research Associate at UCLA from 1997 to 1999, and a Research Assistant in the UCLA Device Research Laboratory from 1999 to 2003, during which time he was also a part-time Consultant for the Advance Photonic Integrated Chip Corporation and the Research Development Laboratories in Culver City, CA. Since March 2003, Dr. Liu joined Department of Electrical Engineering and currently he is an Assistant Professor. Dr. Liu is a member of the Institute of Electrical and Electronics Engineers (IEEE), the American Physics Society (APS), and the Materials Research Society (MRS).